sigmoidal 4-point logarithmic regression Search Results


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Ossila Ltd 4-point probe (t200oa2
The ( a ) variation of carrier concentration ( Ne ) and mobility ( µ ) and ( b ) the results of resistivity ( ρ ) via respective hall and <t>4-point</t> probe measurement for the SnO 2 thin films with the increased plasma power from 1000 to 3000 W.
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Jandel Engineering universal 4-point probe station
The ( a ) variation of carrier concentration ( Ne ) and mobility ( µ ) and ( b ) the results of resistivity ( ρ ) via respective hall and <t>4-point</t> probe measurement for the SnO 2 thin films with the increased plasma power from 1000 to 3000 W.
Universal 4 Point Probe Station, supplied by Jandel Engineering, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Napson Corporation 4-point probe station
The ( a ) variation of carrier concentration ( Ne ) and mobility ( µ ) and ( b ) the results of resistivity ( ρ ) via respective hall and <t>4-point</t> probe measurement for the SnO 2 thin films with the increased plasma power from 1000 to 3000 W.
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Image Search Results


Journal: Data in Brief

Article Title: Data on microstructural and optoelectronic properties of electrodeposited silver mesh transparent conducting electrodes

doi: 10.1016/j.dib.2023.109238

Figure Lengend Snippet:

Article Snippet: How the data were acquired , The optical transmittance of the Ag mesh was measured by a UV–Vis spectrometer (GENESYS 10S Vis, SCINCO) using a glass substrate as a reference. The sheet resistance of the Ag mesh was measured by a 4-point probe (FPP-40 K, DASOL ENG). Microstructural data of the Ag mesh were obtained using a scanning electron microscope (SEM) (FE-SEM, HITACHI SU8230)..

Techniques: Microscopy

The ( a ) variation of carrier concentration ( Ne ) and mobility ( µ ) and ( b ) the results of resistivity ( ρ ) via respective hall and 4-point probe measurement for the SnO 2 thin films with the increased plasma power from 1000 to 3000 W.

Journal: Materials

Article Title: Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO 2 Thin Films via Atomic Layer Deposition

doi: 10.3390/ma14030690

Figure Lengend Snippet: The ( a ) variation of carrier concentration ( Ne ) and mobility ( µ ) and ( b ) the results of resistivity ( ρ ) via respective hall and 4-point probe measurement for the SnO 2 thin films with the increased plasma power from 1000 to 3000 W.

Article Snippet: The resistivity of all samples was further illustrated with 4-point probe (T200OA2, Ossila, Sheffield, UK).

Techniques: Concentration Assay